CdS/CdTe solar cells containing directly deposited CdSxTe1-x alloy layers preprint
(Web-Based Document)

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Golden, CO : National Renewable Energy Laboratory, [2011].
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Web-based Documents or Files - World Wide WebXX(873063.2)Available Online

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Published
Golden, CO : National Renewable Energy Laboratory, [2011].
Format
Web-Based Document
Physical Desc
1 online resource (6 pages) : ill.
Language
English

Notes

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Title from title screen (viewed Oct. 17, 2011).
General Note
"July 2011."
General Note
"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."
General Note
Available online.
Bibliography
Includes bibliographical references.
Description
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at 4̃00 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.
Funding Information
Sponsored by National Renewable Energy Laboratory,contract no. DE-AC36-08GO28308
System Details
Full text available via Internet in .pdf format. Adobe Acrobat Reader required.

Citations

APA Citation, 7th Edition (style guide)

Duenow, J. N. (2011). CdS/CdTe solar cells containing directly deposited CdSxTe1-x alloy layers: preprint . National Renewable Energy Laboratory.

Chicago / Turabian - Author Date Citation, 17th Edition (style guide)

Duenow, Joel N. 2011. CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint. National Renewable Energy Laboratory.

Chicago / Turabian - Humanities (Notes and Bibliography) Citation, 17th Edition (style guide)

Duenow, Joel N. CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint National Renewable Energy Laboratory, 2011.

MLA Citation, 9th Edition (style guide)

Duenow, Joel N. CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint National Renewable Energy Laboratory, 2011.

Note! Citations contain only title, author, edition, publisher, and year published. Citations should be used as a guideline and should be double checked for accuracy. Citation formats are based on standards as of August 2021.